Preparation and Characterization of Cu(In,Ga)(Se,S)2 Thin Films from Electrodeposited Precursors for Hydrogen Production

Jennifer E. Leisch, Raghu N. Bhattacharya, Glenn Teeter, John A. Turner

Research output: Contribution to journalArticlepeer-review

23 Scopus Citations

Abstract

Semiconducting Cu(In,Ga)(Se,S)2 thin films were made from electrodeposited Cu(In,Ga)Se2 precursors, followed by physical vapor deposition of In2S3, Ga, and Se. The bandgaps of these materials were found to be between 1.6 and 2.0eV, which spans the optimal bandgap necessary for application for the top junction in photovoltaic multijunction devices and for unassisted water photolysis. These films were characterized by electron-probe microanalysis, scanning Auger spectroscopy, X-ray diffraction, and photocurrent spectroscopy.

Original languageAmerican English
Pages (from-to)249-259
Number of pages11
JournalSolar Energy Materials and Solar Cells
Volume81
Issue number2
DOIs
StatePublished - 2004

NREL Publication Number

  • NREL/JA-590-33791

Keywords

  • CIGS
  • Electrodiposition
  • Hydrogen

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