Preparation of a-Si:H and a-SiGe:H i-Layers for n-i-p Solar Cells at High Deposition Rates Using a Very High Frequency Technique

Preparation of a-Si:H and a-SiGe:H i-Layers for n-i-p Solar Cells at High Deposition Rates Using a Very High Frequency Technique

Research output: Contribution to conference › Paper

Original language	American English
Pages	113-118
Number of pages	6
State	Published - 1999
Event	Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium - San Francisco, California Duration: 14 Apr 1998 → 17 Apr 1998

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium
City	San Francisco, California
Period	14/04/98 → 17/04/98

Bibliographical note

Work performed by Energy Conversion Devices, Inc., Troy, Michigan

NREL Publication Number

NREL/CP-520-27261

Cite this

@conference{17645ab9a67b43168e0d3d9e35c638c9,

title = "Preparation of a-Si:H and a-SiGe:H i-Layers for n-i-p Solar Cells at High Deposition Rates Using a Very High Frequency Technique",

author = "NREL",

note = "Work performed by Energy Conversion Devices, Inc., Troy, Michigan; Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium ; Conference date: 14-04-1998 Through 17-04-1998",

year = "1999",

language = "American English",

pages = "113--118",

}

TY - CONF

T1 - Preparation of a-Si:H and a-SiGe:H i-Layers for n-i-p Solar Cells at High Deposition Rates Using a Very High Frequency Technique

AU - NREL, null

N1 - Work performed by Energy Conversion Devices, Inc., Troy, Michigan

PY - 1999

Y1 - 1999

M3 - Paper

SP - 113

EP - 118

T2 - Amorphous and Microcrystalline Silicon Technology 1998: Materials Research Society Symposium

Y2 - 14 April 1998 through 17 April 1998

ER -