Preparation of a-Si:H and a-SiGe:H nip Cells at High Rates Using a 70 MHz VHF PECVD Technique

Preparation of a-Si:H and a-SiGe:H nip Cells at High Rates Using a 70 MHz VHF PECVD Technique

Research output: Contribution to conference › Paper

Original language	American English
Pages	303-308
Number of pages	6
State	Published - 1999
Event	NCPV Photovoltaics Program Review: 15th Conference - Denver, Colorado Duration: 9 Sep 1998 → 11 Sep 1998

Conference

Conference	NCPV Photovoltaics Program Review: 15th Conference
City	Denver, Colorado
Period	9/09/98 → 11/09/98

Bibliographical note

Work performed by Energy Conversion Devices, Inc., Troy, Michigan

NREL Publication Number

NREL/CP-520-27403

Cite this

@conference{bf20b1f91a964b3980ab9701d8de3e85,

title = "Preparation of a-Si:H and a-SiGe:H nip Cells at High Rates Using a 70 MHz VHF PECVD Technique",

author = "NREL",

note = "Work performed by Energy Conversion Devices, Inc., Troy, Michigan; NCPV Photovoltaics Program Review: 15th Conference ; Conference date: 09-09-1998 Through 11-09-1998",

year = "1999",

language = "American English",

pages = "303--308",

}