Preparation of in situ Doped Hydrogenated Amorphous Silicon by Homogeneous Chemical Vapor Deposition

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)1461-1465
    Number of pages5
    JournalJournal of Applied Physics
    Issue number3
    StatePublished - 1983

    Bibliographical note

    Work performed by IBM Thomas J. Watson Research Center, Yorktown Heights, New York

    NREL Publication Number

    • ACNR/JA-4067

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