Preparation of in situ Doped Hydrogenated Amorphous Silicon by Homogeneous Chemical Vapor Deposition

Research output: Contribution to journal › Article

Work performed by IBM Thomas J. Watson Research Center, Yorktown Heights, New York

NREL Publication Number

@article{c35e1199300243eba81b4443ba7c66e5,

title = "Preparation of in situ Doped Hydrogenated Amorphous Silicon by Homogeneous Chemical Vapor Deposition",

author = "NREL",

note = "Work performed by IBM Thomas J. Watson Research Center, Yorktown Heights, New York",

year = "1983",

doi = "10.1063/1.332172",

language = "American English",

volume = "54",

pages = "1461--1465",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Preparation of in situ Doped Hydrogenated Amorphous Silicon by Homogeneous Chemical Vapor Deposition

AU - NREL, null

N1 - Work performed by IBM Thomas J. Watson Research Center, Yorktown Heights, New York

PY - 1983

Y1 - 1983

U2 - 10.1063/1.332172

DO - 10.1063/1.332172

M3 - Article

SN - 0021-8979

VL - 54

SP - 1461

EP - 1465

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -