Preparation of Triple-Junction A-Si:H NIP Based Solar Cells at Deposition Rates of 10 A/s Using a Very High Frequency Technique

Preparation of Triple-Junction A-Si:H NIP Based Solar Cells at Deposition Rates of 10 A/s Using a Very High Frequency Technique

Research output: Contribution to conference › Paper

Original language	American English
Pages	133-138
Number of pages	6
State	Published - 1999
Event	Materials Research Society Symposium - San Francisco, California Duration: 5 Apr 1999 → 9 Apr 1999

Conference

Conference	Materials Research Society Symposium
City	San Francisco, California
Period	5/04/99 → 9/04/99

Bibliographical note

Work performed by Energy Conversion Devices, Inc., Troy, Michigan

NREL Publication Number

NREL/CP-520-28444

Cite this

@conference{1aa90b973f8841ba86c445dfde38c92d,

title = "Preparation of Triple-Junction A-Si:H NIP Based Solar Cells at Deposition Rates of 10 A/s Using a Very High Frequency Technique",

author = "NREL",

note = "Work performed by Energy Conversion Devices, Inc., Troy, Michigan; Materials Research Society Symposium ; Conference date: 05-04-1999 Through 09-04-1999",

year = "1999",

language = "American English",

pages = "133--138",

}