Present Understanding of Point Defect Parameters and Diffusion in Silicon: An Overview

Present Understanding of Point Defect Parameters and Diffusion in Silicon: An Overview

Research output: Contribution to conference › Paper

Original language	American English
Pages	3-19
Number of pages	17
State	Published - 1993
Event	Process Physics and Modeling in Semiconductor Technology: Third International Symposium - Honolulu, Hawaii Duration: 19 May 1993 → 21 May 1993

Conference

Conference	Process Physics and Modeling in Semiconductor Technology: Third International Symposium
City	Honolulu, Hawaii
Period	19/05/93 → 21/05/93

Bibliographical note

Work performed by Duke University, Durham, North Carolina

NREL Publication Number

NREL/CP-20540

Cite this

@conference{026965b482d145e6b89eee79164c0d0d,

title = "Present Understanding of Point Defect Parameters and Diffusion in Silicon: An Overview",

author = "NREL",

note = "Work performed by Duke University, Durham, North Carolina; Process Physics and Modeling in Semiconductor Technology: Third International Symposium ; Conference date: 19-05-1993 Through 21-05-1993",

year = "1993",

language = "American English",

pages = "3--19",

}