Abstract
We study the effect of illumination intensity on solar cell performance in a-Si:H solar cells. We find that the fill factor strongly depends on light intensity. As we increase the illumination intensity from low levels to one sun we observe a decrease in fill factor of approximately 15% in as grown cells. We attribute this effect to electric field collapse inside the cell. We propose thatphotogenerated space charge (free and trapped charge) increases with light intensity and causes field collapse. We describe the origin of space charge and the associated capacitance- photocapacitance. We measure the photocapacitance as a barometer to probe the collapsed field. We obtain a good agreement between photocapacitance experiments and theory. We also explore the light intensitydependence of photocapacitance and explain the decrease of FF with the increasing light intensity.
Original language | American English |
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Pages | 215-220 |
Number of pages | 6 |
State | Published - 1996 |
Event | Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996 |
Conference
Conference | Amorphous Silicon Technology 1996: Materials Research Society Symposium |
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City | San Francisco, California |
Period | 8/04/96 → 12/04/96 |
NREL Publication Number
- NREL/CP-23021