Abstract
Here, we demonstrate that high energy electrons can be used to explore the collective oscillation of s, p, and d orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with the increasing Ga content. A comparison of the observed spectra with ab-initio theory reveals that the origin of these spectral features lies in excitations of 3d-electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al1-xGaxN due to the different polarizabilities of the d electrons. Finally, we study the dependence of observed spectral features on the Ga content, lending insights into the origin of these spectral features, and their coupling with electron-hole excitations.
Original language | American English |
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Article number | Article No. 061102 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 112 |
Issue number | 6 |
DOIs | |
State | Published - 5 Feb 2018 |
Bibliographical note
Publisher Copyright:© 2018 Author(s).
NREL Publication Number
- NREL/JA-2C00-71049
Keywords
- band structure
- condensed matter electronic structure
- epitaxy
- plasmons
- quantum wells