Probing the Interface and Microstructures in CdS/CuInSe2 and InGaAsN/GaAs Heterojunctions by Synchrotron Radiation

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	29-34
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	39
DOIs	https://doi.org/10.7567/JJAPS.39S1.29
State	Published - 2000

NREL Publication Number

@article{07ffbf62b03e4316a48d78575dd75e4c,

title = "Probing the Interface and Microstructures in CdS/CuInSe2 and InGaAsN/GaAs Heterojunctions by Synchrotron Radiation",

author = "NREL",

year = "2000",

doi = "10.7567/JJAPS.39S1.29",

language = "American English",

volume = "39",

pages = "29--34",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Probing the Interface and Microstructures in CdS/CuInSe2 and InGaAsN/GaAs Heterojunctions by Synchrotron Radiation

AU - NREL, null

PY - 2000

Y1 - 2000

U2 - 10.7567/JJAPS.39S1.29

DO - 10.7567/JJAPS.39S1.29

M3 - Article

SN - 0021-4922

VL - 39

SP - 29

EP - 34

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

ER -