Abstract
The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).
| Original language | American English |
|---|---|
| Number of pages | 6 |
| State | Published - 2012 |
| Event | 2012 IEEE Photovoltaic Specialists Conference - Austin, Texas Duration: 3 Jun 2012 → 8 Jun 2012 |
Conference
| Conference | 2012 IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Austin, Texas |
| Period | 3/06/12 → 8/06/12 |
NLR Publication Number
- NREL/CP-5200-54099
Keywords
- a-Si:H
- c-Si
- carrier lifetime
- heterojunctions
- passivation