Abstract
Processing options addressing critical issues associated with fabrication of high efficiency thin film CdTe/CdS solar cells are presented. Particular focus is given to methods for: minimizing CdS loss duirng CdCl2 heat treatment; obtaining high open circuit voltages; obtaining spatially uniform properties; and forming ohmic contacts. Data is presented for cells deposited by physical vapordeposition (PVD) which demonstrates that CdS loss can be overcome by use of CdTe1-xSx absorer layers and by controlling the delivery of CdCl2 vapor species during heat treatment. The CdCl2 vapor treatments are shown to produce residue-free surfaces and uniform film properties which leads to uniform cell performance. State of the art open circuit voltages (>850 mV) are obtained with PVD cells byperforming a short high temperature anneal prior to CdCl2 treatment. Low resistance contacts using diffused Cu doping followed by surface etching are demonstrated on CdTe/CdS thin films deposited by five methods.
Original language | American English |
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Pages | 647-654 |
Number of pages | 8 |
State | Published - 1997 |
Event | NREL/SNL Photovoltaics Program Review: 14th Conference - Lakewood, Colorado Duration: 18 Nov 1996 → 22 Nov 1996 |
Conference
Conference | NREL/SNL Photovoltaics Program Review: 14th Conference |
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City | Lakewood, Colorado |
Period | 18/11/96 → 22/11/96 |
Bibliographical note
Work performed by University of Delaware, Newark, DelawareNREL Publication Number
- NREL/CP-23743