Processing-Phase Diagrams: A New Tool for Solution-Deposited Thin-Film Development Applied to the In5O(OPri)13-In2O3 System

Robert M. Pasquarelli, Maikel F.A.M. Van Hest, Philip A. Parilla, John D. Perkins, Ryan O'Hayre, David S. Ginley

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


Understanding processing-property relationships of a precursor is important for achieving the desired properties in opto-electronic thin-films. This work highlights the construction of a processing-phase diagram of the novel In 2O3 precursor In5O(OPri) 13 for transparent conducting oxide applications. The decomposition behavior of the precursor was profiled with thermogravimetry, differential scanning calorimetry, and temperature programmed desorption mass spectroscopy. Decomposition occurred at 150-230 °C. Higher temperature exothermic reactions were identified as structural rearrangement/ordering processes. The precursor powder was found to crystallize into the bixbyite structure at 300-350 °C, presenting a non-crystalline phase-processing window for the material. Crystallization of a film was monitored with in situ X-ray diffraction annealing, which showed a markedly higher crystallization onset of 500 °C and a much larger non-crystalline oxide window. The decomposition and crystallization behavior of the precursor powders and films were combined into a master processing-phase diagram. Solution deposited, crystalline In 2O3 films annealed under Ar-4%H2 achieved a conductivity of 165 S cm-1 with high visible transparency (80%) and exhibited a mobility of 9.6 cm2 V-1 s-1 with a carrier concentration of 1.1 × 1020 cm-3.

Original languageAmerican English
Pages (from-to)2360-2367
Number of pages8
JournalJournal of Materials Chemistry C
Issue number13
StatePublished - 7 Apr 2014

NREL Publication Number

  • NREL/JA-5900-61794


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