Abstract
Dual junction space cells, comprising GaInP/GaAs cells grown on Ge substrates, are now in production. A conservative DJ cell design (efficiency around 22% AM0) was specified. This document surveys the development phase, and the production scale-up. Details of current DJ cell performance are included.
| Original language | American English |
|---|---|
| Pages | 187-190 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 1996 |
| Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
| Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Washington, D.C. |
| Period | 13/05/96 → 17/05/96 |
NLR Publication Number
- NREL/CP-22379