Abstract
Techniques for cost-efficient operation of SiNx:H systems with a capability for hydrogen passivation in a manufacturing environment are analyzed. We conclude that SiNx:H performance may be optimized by a variety of techniques, and that the cost and productivity of the deposition tool may be the determining factors in the industry's decision for a particular technique. PECVD constitutes thecurrent benchmark. Dual magnetron reactive sputtering is a candidate to achieve industry acceptance.
Original language | American English |
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Pages | 300-307 |
Number of pages | 8 |
State | Published - 2002 |
Event | 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 11 Aug 2002 → 14 Aug 2002 |
Conference
Conference | 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes |
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City | Breckenridge, Colorado |
Period | 11/08/02 → 14/08/02 |
NREL Publication Number
- NREL/CP-520-32716
Keywords
- 12th workshop
- crystalline silicon (x-Si) (c-Si)
- PV
- solar cell materials