Abstract
The authors review the progress in research sponsored by the US Department of Energy and the Solar Energy Research Institute to improve the properties of single crystal semiconductors grown in conventional as well as novel regimes. They describe silicon technology and III-V crystal growth, which the project has focused on for their potential to provide photovoltaic devices with very high efficiencies for both flat-plate and concentrator applications. They discuss the electronic characterization and development of solar cells.
Original language | American English |
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Pages | 53-57 |
Number of pages | 5 |
State | Published - 1987 |
Event | Nineteenth IEEE Photovoltaic Specialists Conference-1987 - New Orleans, Louisiana Duration: 4 May 1987 → 8 May 1987 |
Conference
Conference | Nineteenth IEEE Photovoltaic Specialists Conference-1987 |
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City | New Orleans, Louisiana |
Period | 4/05/87 → 8/05/87 |
NREL Publication Number
- ACNR/CP-211-9011