Abstract
Conventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three-terminal heterojunction bipolar transistor solar cell (3T-HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double-junction solar cell. However, since the 3T-HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.
Original language | American English |
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Pages (from-to) | 843-850 |
Number of pages | 8 |
Journal | Progress in Photovoltaics: Research and Applications |
Volume | 30 |
Issue number | 8 |
DOIs | |
State | Published - 2022 |
Bibliographical note
Publisher Copyright:© 2022 John Wiley & Sons, Ltd.
NREL Publication Number
- NREL/JA-5K00-80433
Keywords
- base transport factor
- bottom interdigitated contact
- emitter injection efficiency
- heterojunction bipolar transistor solar cell
- III–V material
- multijunction solar cell
- tandem solar cell