Abstract
The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.
Original language | American English |
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Pages (from-to) | 464-469 |
Number of pages | 6 |
Journal | Energy Procedia |
Volume | 77 |
DOIs | |
State | Published - 2015 |
Event | 5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany Duration: 25 Mar 2015 → 27 Mar 2015 |
Bibliographical note
Publisher Copyright:© 2015 The Authors.
NREL Publication Number
- NREL/JA-5J00-64775
Keywords
- III-V on Si
- tandem solar cells