Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cells

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Abstract

The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9 eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8 eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5 g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.

Original languageAmerican English
Pages (from-to)464-469
Number of pages6
JournalEnergy Procedia
Volume77
DOIs
StatePublished - 2015
Event5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany
Duration: 25 Mar 201527 Mar 2015

Bibliographical note

Publisher Copyright:
© 2015 The Authors.

NREL Publication Number

  • NREL/JA-5J00-64775

Keywords

  • III-V on Si
  • tandem solar cells

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