Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth

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Abstract

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor that has unique properties ideal for high-power, high-temperature, optoelectronic, and sensing applications and has piqued interest over the last decade. It has the potential to be technologically and economically superior to commercially available wide bandgap semiconductor materials, such as silicon carbide and gallium nitride, because its wider bandgap enables increased breakdown voltages and lower on-state resistances, and its ability to be grown from melt enable cost-competitive economics. In this study, we present a techno-economic analysis that projects the cost of 6″ β-Ga2O3wafers fabricated from crystals grown via edge-defined film-fed growth (EFG). At a manufacturing volume of 5000 wafers per month, we predict a unit cost of $320 for a 6″ EFG grown β-Ga2O3epi-wafer. We determine that, when calculated using 2021 iridium crucible costs, EFG has a 2× cost advantage compared to previously reported epi-wafers grown via the Czochralski (CZ) method. We further identify key cost parameters for 6″ β-Ga2O3epi-wafers and present cost-sensitivity analysis of their impact on the final cost.

Original languageAmerican English
Pages (from-to)4854-4863
Number of pages10
JournalCrystal Growth and Design
Volume22
Issue number8
DOIs
StatePublished - 2022

Bibliographical note

Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.

NREL Publication Number

  • NREL/JA-5K00-81844

Keywords

  • Czochralski (CZ) method
  • Ga2O3
  • gallium oxide
  • TEA
  • techno-economic
  • wide bandgap

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