Projection of Best Achievable Efficiency from GaInP/GaAs/Ge Cell Under Concentration

Research output: Contribution to conferencePaper

Abstract

Recently, efficiencies in the 29-34% range have been demonstrated for GaInP/GaAs/Ge ('3J') cells under various spectral and concentration conditions. There is still room for some further improvement in these cell efficiencies, especially in the front grid metallization, optimization of which is especially important for high-concentration operation. Here, we make an estimate of the maximumefficiency which is realistically achievable for the 3J cell under concentration, assuming that all parts of the device, including the front grids, are to be optimized as well as is practically possible. We make this estimate semi-empirically, by starting from the performance which has been demonstrated for the best 3J cells under one-sun conditions. We then extrapolate to concentrator operationassuming optimized front grids. A standard operating temperature of 300K is used throughout.
Original languageAmerican English
Number of pages6
StatePublished - 2003
EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado.
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
CityDenver, Colorado.
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-33522

Keywords

  • concentration conditions
  • efficiency
  • front-grid metallization
  • GaInP/GaAs/Ge
  • spectral conditions
  • triple junction cells

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