Properties and Optimization of ZnTe:Cu Back Contacts on CdTe/CdS Thin Film Solar Cells

    Research output: Contribution to conferencePaper


    Vacuum-evaporated Cu-doped ZnTe films have been studied as the intermediate layer between CdTe and metal contacts in CdTe/CdS thin-film solar cells for the formation of low resistance back contacts. Different metals (Au, Ni, Co) were used as the contact material to the ZnTe layer. The effects of Cu concentration, ZnTe:Cu layer thickness, and ZnTe post-deposition annealing temperature on the cellperformances have been investigated. We found that different metal contacts on the ZnTe layer lead to different open-circuit photovoltages of the solar cells. The series resistance of the CdTe/CdS cells was reduced significantly by the introduction of the ZnTe layer. Fill factors greater than 0.76 and an energy conversion efficiency of 12.9% have been achieved using ZnTe back contacts onelectrodeposited CdTe. Preliminary studies showed good stability of Au/ZnTe-contacted cells under illumination and different bias conditions.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by the Colorado School of Mines, Golden, Colorado

    NREL Publication Number

    • NREL/CP-22425


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