Properties of a-Si:H and a-(Si, Ge):H Solar Cells Prepared Using ECR Deposition Techniques

    Research output: Contribution to conferencePaper


    In this paper, we describe the device preparation, properties and stability of a-Si:H and a-(Si,Ge):H solar cells prepared using the electron cyclotron resonance (ECR) plasma deposition techniques. We show that by controlling the plasma chemistry, we can produce very good devices in the substrate geometry in a single chamber reactor. Both single junction and tandem junction a-Si:H solar cellshave been prepared with high fill factors and good voltages. The stability of these devices is excellent. We have also prepared graded gap a-(Si,Ge):H cells, and they also show very good stability upon light soaking. We find that the properties of a-(Si,Ge):H cells depend critically upon the plasma conditions, and that controlled ion bombardment may be beneficial for improving the performance ofthese cells.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1997
    EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
    Duration: 29 Sep 19973 Oct 1997


    ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
    CityAnaheim, California

    Bibliographical note

    Work performed by Iowa State University, Ames, Iowa

    NREL Publication Number

    • NREL/CP-520-24988


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