Properties of a-Si:H and a-SiGe:H Films Deposited by Photo-Assisted CVD

Properties of a-Si:H and a-SiGe:H Films Deposited by Photo-Assisted CVD

Research output: Contribution to conference › Paper

Original language	American English
Pages	37-42
Number of pages	6
State	Published - 1986
Event	Materials Research Society Spring Meeting - Palo Alto, California Duration: 15 Apr 1986 → 18 Apr 1986

Conference

Conference	Materials Research Society Spring Meeting
City	Palo Alto, California
Period	15/04/86 → 18/04/86

Bibliographical note

Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware

NREL Publication Number

ACNR/CP-8301

Cite this

@conference{496fdb8627634280ab1d9405b2c23c8b,

title = "Properties of a-Si:H and a-SiGe:H Films Deposited by Photo-Assisted CVD",

author = "NREL",

note = "Work performed by Institute of Energy Conversion, University of Delaware, Newark, Delaware; Materials Research Society Spring Meeting ; Conference date: 15-04-1986 Through 18-04-1986",

year = "1986",

language = "American English",

pages = "37--42",

}