Abstract
We study the influence of Cd partial baths on the photovoltaic properties of CuInGaSe2 (CIGS) and CuIn-GaSSe2 (CIGSS) thin film absorbers. We find that efficient solar cells can be fabricated by this treatment, and we compare their properties with those containing CdS window layers grown by chemical bath deposition. The results suggest that Cd plays a dominant role in establishing efficientphotovoltaic junctions in CuInSe2 alloys. Micron scale photoluminescence scans show non-uniformity along the length probed. Cd treatment quenches one of the luminescence transitions, which indicates a change in shallow acceptor level density. We present a model that helps to explain the evolution of photovoltaic action.
Original language | American English |
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Number of pages | 7 |
State | Published - 2002 |
Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
Conference | 29th IEEE PV Specialists Conference |
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City | New Orleans, Louisiana |
Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-31475
Keywords
- absorbers
- chemical bath deposition (CBD)
- compositional grading
- CuInGaSe2 (CIGS)
- CuInGaSSe2 (CIGS)
- current-voltage
- electrolytes
- interface passivation
- inversion
- n-type doping
- photoluminescence
- PV
- thin films