Abstract
We study the influence of Cd partial baths on the photovoltaic properties of CulnGaSe2 (CIGS) and Culn-GaSSe2 (CIGSS) thin film absorbers. We find that efficient solar cells can be fabricated by this treatment, and we compare their properties with those containing CdS window layers grown by chemical bath deposition. The results suggest that Cd plays a dominant role in establishing efficient photovoltaic junctions in CulnSez alloys. Micron scale photoluminescence scans show non-uniformity along the length probed. Cd treatment quenches one of the luminescence transitions, which indicates a change in shallow acceptor level density. We present a model that helps to explain the evolution of photovoltaic action.
Original language | American English |
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Pages | 523-526 |
Number of pages | 4 |
State | Published - 2002 |
Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002 |
Conference
Conference | 29th IEEE Photovoltaic Specialists Conference |
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Country/Territory | United States |
City | New Orleans, LA |
Period | 19/05/02 → 24/05/02 |
Bibliographical note
For preprint version including full text online document, see NREL/CP-520-31475NREL Publication Number
- NREL/CP-520-33715