Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique

doi:10.1109/PVSC.1996.564235

Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique

Research output: Contribution to conference › Paper

Abstract

Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coeffients. Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geometry, and the growth parameters. Values in the range of 10/sup 12/-10/sup -16/ atoms/cm/sup 3/ were targeted. Noadditional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing FE content for similargrain sizes as the FE content increased to 1 x 10/sup 16/ atoms/cm/sup 3/.

Original language	American English
Pages	737-739
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.1996.564235
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22393

Access to Document

10.1109/PVSC.1996.564235

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title = "Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique",

abstract = "Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coeffients. Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geometry, and the growth parameters. Values in the range of 10/sup 12/-10/sup -16/ atoms/cm/sup 3/ were targeted. Noadditional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing FE content for similargrain sizes as the FE content increased to 1 x 10/sup 16/ atoms/cm/sup 3/.",

author = "NREL",

year = "1996",

doi = "10.1109/PVSC.1996.564235",

language = "American English",

pages = "737--739",

note = "Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

TY - CONF

T1 - Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coeffients. Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geometry, and the growth parameters. Values in the range of 10/sup 12/-10/sup -16/ atoms/cm/sup 3/ were targeted. Noadditional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing FE content for similargrain sizes as the FE content increased to 1 x 10/sup 16/ atoms/cm/sup 3/.

AB - Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coeffients. Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geometry, and the growth parameters. Values in the range of 10/sup 12/-10/sup -16/ atoms/cm/sup 3/ were targeted. Noadditional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing FE content for similargrain sizes as the FE content increased to 1 x 10/sup 16/ atoms/cm/sup 3/.

U2 - 10.1109/PVSC.1996.564235

DO - 10.1109/PVSC.1996.564235

M3 - Paper

SP - 737

EP - 739

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique

Abstract

Conference

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