Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique

    Research output: Contribution to conferencePaper


    Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coeffients. Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geometry, and the growth parameters. Values in the range of 10/sup 12/-10/sup -16/ atoms/cm/sup 3/ were targeted. Noadditional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing FE content for similargrain sizes as the FE content increased to 1 x 10/sup 16/ atoms/cm/sup 3/.
    Original languageAmerican English
    Number of pages3
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    NREL Publication Number

    • NREL/CP-22393


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