Abstract
Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction,wavelenth dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.
| Original language | American English |
|---|---|
| Pages | 367-371 |
| Number of pages | 5 |
| State | Published - 1996 |
| Event | Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 11 Apr 1996 |
Conference
| Conference | Thin Films for Photovoltaic and Related Device Applications: Materials Research Society Symposium |
|---|---|
| City | San Francisco, California |
| Period | 8/04/96 → 11/04/96 |
Bibliographical note
Work performed by University of Toledo, Toledo, OhioNREL Publication Number
- NREL/CP-23038