Properties of Reactively Sputtered ZnTe:N and Its Use in Recombination Junctions

Properties of Reactively Sputtered ZnTe:N and Its Use in Recombination Junctions

Research output: Contribution to conference › Paper

Original language	American English
Pages	539-542
Number of pages	4
State	Published - 2002
Event	Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 - New Orleans, Louisiana Duration: 19 May 2002 → 24 May 2002

Conference

Conference	Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002
City	New Orleans, Louisiana
Period	19/05/02 → 24/05/02

Bibliographical note

Work performed by University of Toledo, Toledo, Ohio; University of Delaware, Newark, Delaware; and First Solar, LLC, Perrysburg, Ohio

NREL Publication Number

NREL/CP-520-33670

Cite this

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title = "Properties of Reactively Sputtered ZnTe:N and Its Use in Recombination Junctions",

author = "NREL",

note = "Work performed by University of Toledo, Toledo, Ohio; University of Delaware, Newark, Delaware; and First Solar, LLC, Perrysburg, Ohio; Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "539--542",

}

TY - CONF

T1 - Properties of Reactively Sputtered ZnTe:N and Its Use in Recombination Junctions

AU - NREL, null

N1 - Work performed by University of Toledo, Toledo, Ohio; University of Delaware, Newark, Delaware; and First Solar, LLC, Perrysburg, Ohio

PY - 2002

Y1 - 2002

M3 - Paper

SP - 539

EP - 542

T2 - Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002

Y2 - 19 May 2002 through 24 May 2002

ER -