Properties of Substrate-Type a-Si:H Devices Prepared Using ECR Conditions

Properties of Substrate-Type a-Si:H Devices Prepared Using ECR Conditions

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Abstract

We report on the preparation and properties of a-Si:H devices prepared at high temperatures on stainless steel substrates using low pressure ECR plasma deposition techniques. The devices were prepared using either Hydrogen or Helium as the plasma diluent gas. The use of He as the plasma gas led to films having significantly lower H concentration (4-5%) and a lower bandgap than comparable filmsmade using hydrogen dilution. We find that we can make excellent devices, with good fill factors (over 70%) and voltages (over 0.86 V) using either H or He dilution. The use of He led to devices having smaller bandgap, by about 35-40 meV compared to devices made using H dilution. Detailed quantum efficiency measurements show that the hole collection in both types of devices is excellent, andthat Urbach energies of tail states in each case is in the range of 43-45 meV.

Original language	American English
Pages	39-44
Number of pages	6
State	Published - 1996
Event	Amorphous Silicon Technology 1996: Materials Research Society Symposium - San Francisco, California Duration: 8 Apr 1996 → 12 Apr 1996

Conference

Conference	Amorphous Silicon Technology 1996: Materials Research Society Symposium
City	San Francisco, California
Period	8/04/96 → 12/04/96

Bibliographical note

Work performed by Iowa State University, Ames, Iowa

NREL Publication Number

NREL/CP-23014

Cite this

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title = "Properties of Substrate-Type a-Si:H Devices Prepared Using ECR Conditions",

abstract = "We report on the preparation and properties of a-Si:H devices prepared at high temperatures on stainless steel substrates using low pressure ECR plasma deposition techniques. The devices were prepared using either Hydrogen or Helium as the plasma diluent gas. The use of He as the plasma gas led to films having significantly lower H concentration (4-5%) and a lower bandgap than comparable filmsmade using hydrogen dilution. We find that we can make excellent devices, with good fill factors (over 70%) and voltages (over 0.86 V) using either H or He dilution. The use of He led to devices having smaller bandgap, by about 35-40 meV compared to devices made using H dilution. Detailed quantum efficiency measurements show that the hole collection in both types of devices is excellent, andthat Urbach energies of tail states in each case is in the range of 43-45 meV.",

author = "NREL",

note = "Work performed by Iowa State University, Ames, Iowa; Amorphous Silicon Technology 1996: Materials Research Society Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

year = "1996",

language = "American English",

pages = "39--44",

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TY - CONF

T1 - Properties of Substrate-Type a-Si:H Devices Prepared Using ECR Conditions

AU - NREL, null

N1 - Work performed by Iowa State University, Ames, Iowa

PY - 1996

Y1 - 1996

N2 - We report on the preparation and properties of a-Si:H devices prepared at high temperatures on stainless steel substrates using low pressure ECR plasma deposition techniques. The devices were prepared using either Hydrogen or Helium as the plasma diluent gas. The use of He as the plasma gas led to films having significantly lower H concentration (4-5%) and a lower bandgap than comparable filmsmade using hydrogen dilution. We find that we can make excellent devices, with good fill factors (over 70%) and voltages (over 0.86 V) using either H or He dilution. The use of He led to devices having smaller bandgap, by about 35-40 meV compared to devices made using H dilution. Detailed quantum efficiency measurements show that the hole collection in both types of devices is excellent, andthat Urbach energies of tail states in each case is in the range of 43-45 meV.

AB - We report on the preparation and properties of a-Si:H devices prepared at high temperatures on stainless steel substrates using low pressure ECR plasma deposition techniques. The devices were prepared using either Hydrogen or Helium as the plasma diluent gas. The use of He as the plasma gas led to films having significantly lower H concentration (4-5%) and a lower bandgap than comparable filmsmade using hydrogen dilution. We find that we can make excellent devices, with good fill factors (over 70%) and voltages (over 0.86 V) using either H or He dilution. The use of He led to devices having smaller bandgap, by about 35-40 meV compared to devices made using H dilution. Detailed quantum efficiency measurements show that the hole collection in both types of devices is excellent, andthat Urbach energies of tail states in each case is in the range of 43-45 meV.

M3 - Paper

SP - 39

EP - 44

T2 - Amorphous Silicon Technology 1996: Materials Research Society Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Properties of Substrate-Type a-Si:H Devices Prepared Using ECR Conditions

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this