Properties of the Mo-CuInSe2 Interface

P. E. Russell, O. Jamjoum, R. K. Ahrenkiel, L. L. Kazmerski, R. A. Mickelsen, W. S. Chen

Research output: Contribution to journalArticlepeer-review

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Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.

Original languageAmerican English
Pages (from-to)995-997
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - 1982

NREL Publication Number

  • ACNR/JA-213-4301


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