Abstract
Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.
Original language | American English |
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Pages (from-to) | 995-997 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 40 |
Issue number | 11 |
DOIs | |
State | Published - 1982 |
NREL Publication Number
- ACNR/JA-213-4301