Properties of the Mo-CuInSe2 Interface

P. E. Russell; O. Jamjoum; R. K. Ahrenkiel; L. L. Kazmerski; R. A. Mickelsen; W. S. Chen

doi:10.1063/1.92955

Properties of the Mo-CuInSe2 Interface

P. E. Russell
, O. Jamjoum
, R. K. Ahrenkiel
, L. L. Kazmerski
, R. A. Mickelsen
, W. S. Chen

Materials Science

Research output: Contribution to journal › Article › peer-review

51 Scopus Citations

Abstract

Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe₂ solar cells. The Mo- p-CuInSe₂ interface has been studied for both polycrystalline and single- crystal CuInSe₂, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe₂.

Original language	American English
Pages (from-to)	995-997
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	11
DOIs	https://doi.org/10.1063/1.92955 https://doi.org/10.1063/1.92955
State	Published - 1982

NLR Publication Number

ACNR/JA-213-4301

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title = "Properties of the Mo-CuInSe2 Interface",

abstract = "Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.",

author = "Russell, \{P. E.\} and O. Jamjoum and Ahrenkiel, \{R. K.\} and Kazmerski, \{L. L.\} and Mickelsen, \{R. A.\} and Chen, \{W. S.\}",

year = "1982",

doi = "10.1063/1.92955",

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pages = "995--997",

journal = "Applied Physics Letters",

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T1 - Properties of the Mo-CuInSe2 Interface

AU - Russell, P. E.

AU - Jamjoum, O.

AU - Ahrenkiel, R. K.

AU - Kazmerski, L. L.

AU - Mickelsen, R. A.

AU - Chen, W. S.

PY - 1982

Y1 - 1982

N2 - Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.

AB - Mo has been suggested and used as an ohmic back contact for CdS/p-CuInSe2 solar cells. The Mo- p-CuInSe2 interface has been studied for both polycrystalline and single- crystal CuInSe2, using electron beam induced current and capacitance-voltage techniques. The interface is found to form a Schottky barrier, thereby limiting the attainable voltage of a solar cell with Mo back contact. Au is the only known ohmic contact to p-CuInSe2.

UR - https://www.scopus.com/pages/publications/0007685687

U2 - 10.1063/1.92955

DO - 10.1063/1.92955

M3 - Article

AN - SCOPUS:0007685687

SN - 0003-6951

VL - 40

SP - 995

EP - 997

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Properties of the Mo-CuInSe2 Interface

Abstract

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