Properties of the Si-H Bond-Stretching Absorption Band in a-Si:H Grown by Remote Plasma Enhanced CVD (RPECVD)

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)839-842
    Number of pages4
    JournalJournal of Non-Crystalline Solids
    Volume97&98, Part II
    StatePublished - 1987

    Bibliographical note

    Work performed by Department of Physics, North Carolina State University, Raleigh, North Carolina

    NREL Publication Number

    • ACNR/JA-10703

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