Properties of Wide-Gap Chalcopyrite Semiconductors for Photovoltaic Applications: Final Report, 8 July 1998 -- 17 October 2001

    Research output: NRELSubcontract Report


    The objectives of this project were to obtain a fundamental understanding of wide-gap chalcopyrite semiconductors and photovoltaic devices. Information to be gathered included significant new fundamental materials data necessary for accurate modeling of single- and tandem-junction devices, basic materials science of wider-gap chalcopyrite semiconductors to be used in next-generation devices, andpractical information on the operation of devices incorporating these materials. Deposition used a hybrid sputtering and evaporation method shown previously to produce high-quality epitaxial layers of Cu(In,Ga)Se2 (CIGS). Materials analysis was also provided to assist members of the National CIS Team, of which, through this contract, we were a member. Solar cells produced from resultingsingle-crystal epitaxial layers in collaboration with various members of the CIS Team were used to determine the factors limiting performance of the devices based on analysis of the results. Because epitaxial growth allows us to determine the surface orientation of our films specifically by choice of the substrate surface on which the film is grown, a major focus of the project concerned thenature of (110)-oriented CIGS films and the performance of solar cells produced from these films. We begin this summary with a description of the results for growth on (110) GaAs, which formed a basis for much of the work ultimately conducted under the program.
    Original languageAmerican English
    PublisherNational Renewable Energy Laboratory (NREL)
    Number of pages33
    StatePublished - 2003

    Bibliographical note

    Work performed by University of Illinois, Urbana, Illinois

    NREL Publication Number

    • NREL/SR-520-34335


    • atomic force microscopy (AFM)
    • backscattering diffraction patterns
    • chalcopyrites semiconductor
    • energy dispersive x-ray spectroscopy
    • hybrid sputtering
    • manufacturing
    • PV
    • scanning electron microscopy (SEM)
    • thin films
    • wide gap


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