Abstract
We have developed a new approach to growing photovoltaic-quality crystal silicon (c-Si) films on glass. Other approaches to film c-Si focus on increasing grain size in order to reduce the deleterious effects of grain boundaries. Instead, we have developed an approach to align the silicon grains biaxially (both in and out of plane) so that 1) grain boundaries are 'low-angle' and have less effecton the electronic properties of the material and 2) subsequent epitaxial thickening is simplified. They key to our approach is the use of a foreign template layer that can be grown with biaxial texture directly on glass.
Original language | American English |
---|---|
Number of pages | 5 |
State | Published - 2005 |
Event | 2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005 |
Conference
Conference | 2005 DOE Solar Energy Technologies Program Review Meeting |
---|---|
City | Denver, Colorado |
Period | 7/11/05 → 10/11/05 |
Bibliographical note
Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)NREL Publication Number
- NREL/CP-520-38977
Keywords
- crystal Si
- NREL
- photovoltaics (PV)
- PV
- solar
- thin films