Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films

Mitchell Lancaster, Rachel Mow, Jun Liu, Quintin Cheek, Molly M. Macinnes, Mowafak M. Al-Jassim, Todd G. Deutsch, James L. Young, Stephen Maldonado

Research output: Contribution to journalArticlepeer-review

19 Scopus Citations


Catalytic MoSx thin films have been directly photoelectrodeposited on GaInP2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoSx deposition conditions were controlled to obtain 8-10 nm films directly on p-GaInP2 substrates without ancillary protective layers. The films were nominally composed of MoS2, with additional MoOxSy and MoO3 species detected and showed no long-range crystalline order. The as-deposited material showed excellent catalytic activity toward the hydrogen evolution reaction relative to bare p-GaInP2. Notably, no appreciable photocurrent reduction was incurred by the addition of the photoelectrodeposited MoSx catalyst to the GaInP2 photocathode under light-limited operating conditions, highlighting the advantageous optical properties of the film. The MoSx catalyst also imparted enhanced durability toward photoelectrochemical hydrogen evolution in acidic conditions, maintaining nearly 85% of the initial photocurrent after 50 h of electrolysis. In total, this work demonstrates a simple method for producing dual-function catalyst/protective layers directly on high-performance, planar III-V photoelectrodes for photoelectrochemical energy conversion.

Original languageAmerican English
Pages (from-to)25115-25122
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number28
StatePublished - 18 Jun 2019

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

NREL Publication Number

  • NREL/JA-5900-74260


  • durability
  • III-V semiconductor
  • MoS
  • photoelectrodeposition
  • water-splitting


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