Protocrystalline Si:H p-Type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

Protocrystalline Si:H p-Type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

Research output: Contribution to conference › Paper

Original language	American English
Pages	565-570
Number of pages	6
State	Published - 2002
Event	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium - San Francisco, California Duration: 2 Apr 2002 → 5 Apr 2002

Conference

Conference	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium
City	San Francisco, California
Period	2/04/02 → 5/04/02

Bibliographical note

Work performed by Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

NREL/CP-520-34507

Cite this

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title = "Protocrystalline Si:H p-Type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells",

author = "NREL",

note = "Work performed by Pennsylvania State University, University Park, Pennsylvania; Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium ; Conference date: 02-04-2002 Through 05-04-2002",

year = "2002",

language = "American English",

pages = "565--570",

}

TY - CONF

T1 - Protocrystalline Si:H p-Type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

AU - NREL, null

N1 - Work performed by Pennsylvania State University, University Park, Pennsylvania

PY - 2002

Y1 - 2002

M3 - Paper

SP - 565

EP - 570

T2 - Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium

Y2 - 2 April 2002 through 5 April 2002

ER -