Pulsed Laser Deposited Nb doped TiO2 as a Transparent Conducting Oxide

Matthew S. Dabney; Maikel F.A.M. van Hest; Charles W. Teplin; S. Phil Arenkiel; John D. Perkins; David S. Ginley

doi:10.1016/j.tsf.2007.10.093

Pulsed Laser Deposited Nb doped TiO2 as a Transparent Conducting Oxide

Matthew S. Dabney, Maikel F.A.M. van Hest, Charles W. Teplin, S. Phil Arenkiel, John D. Perkins, David S. Ginley

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

65 Scopus Citations

Abstract

Nb doped TiO₂ (Nb:TiO₂) is a promising indium-free transparent conducting oxide. We have examined the growth of Nb:TiO₂ thin films by pulsed laser deposition (PLD) on SrTiO₃, LaAlO₃, and fused silica. For <004> oriented anatase Nb:TiO₂ films grown on SrTiO₃ by PLD at 550 °C, the conductivity can be as high as 2500 S/cm. A nearly thickness independent conductivity for Nb:TiO₂ demonstrates that the conductivity is a bulk property and not a substrate interface effect. In addition, Nb:TiO₂ films deposited at room temperature were annealed at temperatures up to 750 °C in either vacuum or 1.3 × 10^{- 3} Pa O₂. For these films, conductivities as high as 3300 S/cm on SrTiO₃ and 85 S/cm on LaAlO₃ substrates were obtained for the highest temperature vacuum anneals, albeit with some loss in transparency.

Original language	American English
Pages (from-to)	4133-4138
Number of pages	6
Journal	Thin Solid Films
Volume	516
Issue number	12
DOIs	https://doi.org/10.1016/j.tsf.2007.10.093 https://doi.org/10.1016/j.tsf.2007.10.093
State	Published - 2008

NREL Publication Number

NREL/JA-520-43493

Keywords

Anatase
Epitaxial
Pulsed laser deposition
Titanium dioxide
Transparent conducting oxides

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title = "Pulsed Laser Deposited Nb doped TiO2 as a Transparent Conducting Oxide",

abstract = "Nb doped TiO2 (Nb:TiO2) is a promising indium-free transparent conducting oxide. We have examined the growth of Nb:TiO2 thin films by pulsed laser deposition (PLD) on SrTiO3, LaAlO3, and fused silica. For <004> oriented anatase Nb:TiO2 films grown on SrTiO3 by PLD at 550 °C, the conductivity can be as high as 2500 S/cm. A nearly thickness independent conductivity for Nb:TiO2 demonstrates that the conductivity is a bulk property and not a substrate interface effect. In addition, Nb:TiO2 films deposited at room temperature were annealed at temperatures up to 750 °C in either vacuum or 1.3 × 10- 3 Pa O2. For these films, conductivities as high as 3300 S/cm on SrTiO3 and 85 S/cm on LaAlO3 substrates were obtained for the highest temperature vacuum anneals, albeit with some loss in transparency.",

keywords = "Anatase, Epitaxial, Pulsed laser deposition, Titanium dioxide, Transparent conducting oxides",

author = "Dabney, {Matthew S.} and {van Hest}, {Maikel F.A.M.} and Teplin, {Charles W.} and Arenkiel, {S. Phil} and Perkins, {John D.} and Ginley, {David S.}",

year = "2008",

doi = "10.1016/j.tsf.2007.10.093",

language = "American English",

volume = "516",

pages = "4133--4138",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Pulsed Laser Deposited Nb doped TiO2 as a Transparent Conducting Oxide

AU - Dabney, Matthew S.

AU - van Hest, Maikel F.A.M.

AU - Teplin, Charles W.

AU - Arenkiel, S. Phil

AU - Perkins, John D.

AU - Ginley, David S.

PY - 2008

Y1 - 2008

N2 - Nb doped TiO2 (Nb:TiO2) is a promising indium-free transparent conducting oxide. We have examined the growth of Nb:TiO2 thin films by pulsed laser deposition (PLD) on SrTiO3, LaAlO3, and fused silica. For <004> oriented anatase Nb:TiO2 films grown on SrTiO3 by PLD at 550 °C, the conductivity can be as high as 2500 S/cm. A nearly thickness independent conductivity for Nb:TiO2 demonstrates that the conductivity is a bulk property and not a substrate interface effect. In addition, Nb:TiO2 films deposited at room temperature were annealed at temperatures up to 750 °C in either vacuum or 1.3 × 10- 3 Pa O2. For these films, conductivities as high as 3300 S/cm on SrTiO3 and 85 S/cm on LaAlO3 substrates were obtained for the highest temperature vacuum anneals, albeit with some loss in transparency.

AB - Nb doped TiO2 (Nb:TiO2) is a promising indium-free transparent conducting oxide. We have examined the growth of Nb:TiO2 thin films by pulsed laser deposition (PLD) on SrTiO3, LaAlO3, and fused silica. For <004> oriented anatase Nb:TiO2 films grown on SrTiO3 by PLD at 550 °C, the conductivity can be as high as 2500 S/cm. A nearly thickness independent conductivity for Nb:TiO2 demonstrates that the conductivity is a bulk property and not a substrate interface effect. In addition, Nb:TiO2 films deposited at room temperature were annealed at temperatures up to 750 °C in either vacuum or 1.3 × 10- 3 Pa O2. For these films, conductivities as high as 3300 S/cm on SrTiO3 and 85 S/cm on LaAlO3 substrates were obtained for the highest temperature vacuum anneals, albeit with some loss in transparency.

KW - Anatase

KW - Epitaxial

KW - Pulsed laser deposition

KW - Titanium dioxide

KW - Transparent conducting oxides

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U2 - 10.1016/j.tsf.2007.10.093

DO - 10.1016/j.tsf.2007.10.093

M3 - Article

AN - SCOPUS:40749101405

SN - 0040-6090

VL - 516

SP - 4133

EP - 4138

JO - Thin Solid Films

JF - Thin Solid Films

IS - 12

ER -

Pulsed Laser Deposited Nb doped TiO2 as a Transparent Conducting Oxide

Abstract

NREL Publication Number

Keywords

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