Abstract
We present the first report of the synthesis of Cd2SnO4 films by pulsed laser deposition. Controlling the substrate temperature and the ambient atmosphere allowed for the synthesis of films ranging from amorphous to crystalline with some crystalline films exhibiting strong texture. Highly transparent films with large mobilities were obtained for both the amorphous and crystalline films. Sheet resistances of 15.5 Ω/square and mobilities of up to 44.7 cm2/V.s were observed. Typical carrier concentrations showed the crystalline films to be degenerate with carrier concentrations of 5×1020 cm-3 while amorphous films had carrier concentrations lower by about half. Band gaps for the films ranged between 3.1-3.8 eV. These films are attractive candidates for TCO applications in thin film photovoltaic devices, flat panel displays, electrochromic windows, and as plasma filters for thermophotovoltaic devices.
Original language | American English |
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Pages | 51-56 |
Number of pages | 6 |
DOIs | |
State | Published - 1995 |
Externally published | Yes |
Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 18 Apr 1995 → 21 Apr 1995 |
Conference
Conference | Proceedings of the 1995 MRS Spring Meeting |
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City | San Francisco, CA, USA |
Period | 18/04/95 → 21/04/95 |
NREL Publication Number
- NREL/CP-20609