Purity and Purification of Source Materials for III-V MOCVD

J. M. Olson, S. R. Kurtz, A. E. Kibbler

Research output: Contribution to journalArticlepeer-review

9 Scopus Citations


The major factors that affect the quality of MOCVD-grown III-V electronic materials are reviewed. Of prime importance is the purity of the source compounds, for example, trimethylgallium (TMG), trimethylindium (TMI), arsine and phosphine. Generally, we find that the quality of these commonly used, commercially available sources are good, as evidenced by the relatively good electronic quality of the product compounds, GaAs and InP. Newer or less commonly used sources such as cyclopentadienylmagnesium (Cp2Mg) or diethylarsine, may still require further purification. A simple apparatus for the laboratory-scale vacuum distillation of MOCVD source materials is presented. The utility and efficacy of this purification technique is demonstrated by its application to the purification of silicon- and oxygen-contaminated trimethylindium.

Original languageAmerican English
Pages (from-to)131-136
Number of pages6
JournalJournal of Crystal Growth
Issue number1
StatePublished - 1988

NREL Publication Number

  • ACNR/JA-212-10389


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