PV Module with an Active Area Utilization of 99.8%

doi:10.1109/PVSC.1996.564341

PV Module with an Active Area Utilization of 99.8%

Research output: Contribution to conference › Paper

Abstract

We have developed a laser-interconnected high-efficiency a-Si alloy module with an active area utilization of 99.8%. This structure uses very small through-hole contact points to collect current from the TCO to the more conductive stainless steel substrate, resulting in a large-area parallel-connected module with very little shadow loss. In addition to a dramatic increase in the area utilizationwe have also demonstrated great potential for improving the manufacturing process and reducing the cost of our modules. The improvement in the manufacturing process of these modules is a result of the high degree of automation that can be obtained using this laser process. The improved surface feature height of this module over the conventional finger designs will allow us to significantlyreduce the thickness of the encapsulation materials. We will present details on an 11.5% multi-junction device using this advanced process.

Original language	American English
Pages	1173-1176
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564341
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by United Solar Systems Corp., Troy, Michigan

NREL Publication Number

NREL/CP-22515

Access to Document

10.1109/PVSC.1996.564341

Cite this

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title = "PV Module with an Active Area Utilization of 99.8%",

abstract = "We have developed a laser-interconnected high-efficiency a-Si alloy module with an active area utilization of 99.8%. This structure uses very small through-hole contact points to collect current from the TCO to the more conductive stainless steel substrate, resulting in a large-area parallel-connected module with very little shadow loss. In addition to a dramatic increase in the area utilizationwe have also demonstrated great potential for improving the manufacturing process and reducing the cost of our modules. The improvement in the manufacturing process of these modules is a result of the high degree of automation that can be obtained using this laser process. The improved surface feature height of this module over the conventional finger designs will allow us to significantlyreduce the thickness of the encapsulation materials. We will present details on an 11.5% multi-junction device using this advanced process.",

author = "NREL",

note = "Work performed by United Solar Systems Corp., Troy, Michigan; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564341",

language = "American English",

pages = "1173--1176",

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TY - CONF

T1 - PV Module with an Active Area Utilization of 99.8%

AU - NREL, null

N1 - Work performed by United Solar Systems Corp., Troy, Michigan

PY - 1996

Y1 - 1996

N2 - We have developed a laser-interconnected high-efficiency a-Si alloy module with an active area utilization of 99.8%. This structure uses very small through-hole contact points to collect current from the TCO to the more conductive stainless steel substrate, resulting in a large-area parallel-connected module with very little shadow loss. In addition to a dramatic increase in the area utilizationwe have also demonstrated great potential for improving the manufacturing process and reducing the cost of our modules. The improvement in the manufacturing process of these modules is a result of the high degree of automation that can be obtained using this laser process. The improved surface feature height of this module over the conventional finger designs will allow us to significantlyreduce the thickness of the encapsulation materials. We will present details on an 11.5% multi-junction device using this advanced process.

AB - We have developed a laser-interconnected high-efficiency a-Si alloy module with an active area utilization of 99.8%. This structure uses very small through-hole contact points to collect current from the TCO to the more conductive stainless steel substrate, resulting in a large-area parallel-connected module with very little shadow loss. In addition to a dramatic increase in the area utilizationwe have also demonstrated great potential for improving the manufacturing process and reducing the cost of our modules. The improvement in the manufacturing process of these modules is a result of the high degree of automation that can be obtained using this laser process. The improved surface feature height of this module over the conventional finger designs will allow us to significantlyreduce the thickness of the encapsulation materials. We will present details on an 11.5% multi-junction device using this advanced process.

U2 - 10.1109/PVSC.1996.564341

DO - 10.1109/PVSC.1996.564341

M3 - Paper

SP - 1173

EP - 1176

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

PV Module with an Active Area Utilization of 99.8%

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this