Quadruple-Period Ordering in MBE GaAsSb Alloys

Iskander G. Batyrev, Andrew G. Norman, Shengbai Zhang, Su Huai Wei

Research output: Contribution to conferencePaperpeer-review

Abstract

Experimental and theoretical studies are reported for a quadruple period ordering found in GaAsSb alloy layers grown by molecular beam epitaxy at high growth temperatures. We propose a growth model that accounts for the observed three-dimensional (3D) ordered structure. It is shown that the already-ordered material in the previously grown layer affects the reconstruction of the growth front with respect to the underlying alloy template resulting in the correct stacking of the individual 2D ordered layers into the observed 3D ordered structure.

Original languageAmerican English
Pages297-307
Number of pages11
DOIs
StatePublished - 2003
EventSelf-Organized Processes in Semiconductor Heteroepitaxy: Materials Research Society Symposium - Boston, Massachusetts
Duration: 1 Dec 20035 Dec 2003

Conference

ConferenceSelf-Organized Processes in Semiconductor Heteroepitaxy: Materials Research Society Symposium
CityBoston, Massachusetts
Period1/12/035/12/03

NREL Publication Number

  • NREL/CP-590-37300

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