Abstract
Experimental and theoretical studies are reported for a quadruple period ordering found in GaAsSb alloy layers grown by molecular beam epitaxy at high growth temperatures. We propose a growth model that accounts for the observed three-dimensional (3D) ordered structure. It is shown that the already-ordered material in the previously grown layer affects the reconstruction of the growth front with respect to the underlying alloy template resulting in the correct stacking of the individual 2D ordered layers into the observed 3D ordered structure.
Original language | American English |
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Pages | 297-307 |
Number of pages | 11 |
DOIs | |
State | Published - 2003 |
Event | Self-Organized Processes in Semiconductor Heteroepitaxy: Materials Research Society Symposium - Boston, Massachusetts Duration: 1 Dec 2003 → 5 Dec 2003 |
Conference
Conference | Self-Organized Processes in Semiconductor Heteroepitaxy: Materials Research Society Symposium |
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City | Boston, Massachusetts |
Period | 1/12/03 → 5/12/03 |
NREL Publication Number
- NREL/CP-590-37300