Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers: Paper No. 1066-A11-06

Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers: Paper No. 1066-A11-06

Research output: Contribution to conference › Paper

Original language	American English
Pages	285-289
Number of pages	5
State	Published - 2008
Event	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium - San Francisco, California Duration: 25 Mar 2008 → 28 Mar 2008

Conference

Conference	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium
City	San Francisco, California
Period	25/03/08 → 28/03/08

NREL Publication Number

NREL/CP-520-43193

Keywords

HWCVD
silicon films
solar cells

Cite this

@conference{fcf844b10ef543b6a4c1ba2085e95bdf,

title = "Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers: Paper No. 1066-A11-06",

keywords = "HWCVD, silicon films, solar cells",

author = "NREL",

year = "2008",

language = "American English",

pages = "285--289",

note = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium ; Conference date: 25-03-2008 Through 28-03-2008",

}

TY - CONF

T1 - Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers

T2 - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium

AU - NREL, null

PY - 2008

Y1 - 2008

KW - HWCVD

KW - silicon films

KW - solar cells

M3 - Paper

SP - 285

EP - 289

Y2 - 25 March 2008 through 28 March 2008

ER -