Quantification of Atomic Scale Defects in Poly Si PV Devices using Atom Probe Tomography

Brian P. Gorman; Harvey L. Guthrey; Mowafak M. Al-Jassim

doi:10.1109/PVSC.2012.6317880

Quantification of Atomic Scale Defects in Poly Si PV Devices using Atom Probe Tomography

Brian P. Gorman, Harvey L. Guthrey, Mowafak M. Al-Jassim

Materials Science

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Characterization of defect locations and their effects on transport in polycrystalline Si photovoltaics is readily accomplished using optical and electrical characterization. Information on the elemental nature of these defects is more difficult due to both the low concentrations and highly localized positions. This work demonstrates the ability to locate and elementally analyze electronic defects in these devices using correlative electron microscopy and spectroscopy within a focused ion beam specimen preparation tool followed by 3-D atom probe tomography.

Original language	American English
Pages	1498-1500
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2012.6317880 https://doi.org/10.1109/PVSC.2012.6317880
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

NREL Publication Number

NREL/CP-5200-57523

Keywords

atom probe tomography
electron beam induced current
photovoltaic cells
silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Quantification of Atomic Scale Defects in Poly Si PV Devices using Atom Probe Tomography",

abstract = "Characterization of defect locations and their effects on transport in polycrystalline Si photovoltaics is readily accomplished using optical and electrical characterization. Information on the elemental nature of these defects is more difficult due to both the low concentrations and highly localized positions. This work demonstrates the ability to locate and elementally analyze electronic defects in these devices using correlative electron microscopy and spectroscopy within a focused ion beam specimen preparation tool followed by 3-D atom probe tomography.",

keywords = "atom probe tomography, electron beam induced current, photovoltaic cells, silicon",

author = "Gorman, {Brian P.} and Guthrey, {Harvey L.} and Al-Jassim, {Mowafak M.}",

year = "2012",

doi = "10.1109/PVSC.2012.6317880",

language = "American English",

pages = "1498--1500",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

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T1 - Quantification of Atomic Scale Defects in Poly Si PV Devices using Atom Probe Tomography

AU - Gorman, Brian P.

AU - Guthrey, Harvey L.

AU - Al-Jassim, Mowafak M.

PY - 2012

Y1 - 2012

N2 - Characterization of defect locations and their effects on transport in polycrystalline Si photovoltaics is readily accomplished using optical and electrical characterization. Information on the elemental nature of these defects is more difficult due to both the low concentrations and highly localized positions. This work demonstrates the ability to locate and elementally analyze electronic defects in these devices using correlative electron microscopy and spectroscopy within a focused ion beam specimen preparation tool followed by 3-D atom probe tomography.

AB - Characterization of defect locations and their effects on transport in polycrystalline Si photovoltaics is readily accomplished using optical and electrical characterization. Information on the elemental nature of these defects is more difficult due to both the low concentrations and highly localized positions. This work demonstrates the ability to locate and elementally analyze electronic defects in these devices using correlative electron microscopy and spectroscopy within a focused ion beam specimen preparation tool followed by 3-D atom probe tomography.

KW - atom probe tomography

KW - electron beam induced current

KW - photovoltaic cells

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84869399996&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6317880

DO - 10.1109/PVSC.2012.6317880

M3 - Paper

AN - SCOPUS:84869399996

SP - 1498

EP - 1500

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Quantification of Atomic Scale Defects in Poly Si PV Devices using Atom Probe Tomography

Abstract

Conference

NREL Publication Number

Keywords

UN SDGs

Access to Document

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