Quantifying the Effect of Metal-Rich Precipitates on Minority Carrier Diffusion Length in Multicrystalline Silicon Using Synchrotron-Based Spectrally Resolved X-Ray Beam-Induced Current: Article No. 044101

doi:10.1063/1.1997274

Quantifying the Effect of Metal-Rich Precipitates on Minority Carrier Diffusion Length in Multicrystalline Silicon Using Synchrotron-Based Spectrally Resolved X-Ray Beam-Induced Current: Article No. 044101

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	4
DOIs	https://doi.org/10.1063/1.1997274
State	Published - 2005

NREL Publication Number

NREL/JA-520-38823

Access to Document

10.1063/1.1997274

Cite this

@article{b8071164824249d8a4287db816340904,

title = "Quantifying the Effect of Metal-Rich Precipitates on Minority Carrier Diffusion Length in Multicrystalline Silicon Using Synchrotron-Based Spectrally Resolved X-Ray Beam-Induced Current: Article No. 044101",

author = "NREL",

year = "2005",

doi = "10.1063/1.1997274",

language = "American English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Quantifying the Effect of Metal-Rich Precipitates on Minority Carrier Diffusion Length in Multicrystalline Silicon Using Synchrotron-Based Spectrally Resolved X-Ray Beam-Induced Current

T2 - Article No. 044101

AU - NREL, null

PY - 2005

Y1 - 2005

U2 - 10.1063/1.1997274

DO - 10.1063/1.1997274

M3 - Article

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -