Abstract
The introduction of selenium in CdSeTe/CdTe solar cells has led to improved device performances attributed to the passivation of bulk defects. In this work, high-resolution cathodoluminescence experiments are performed on a series of CdSeTe/CdTe thin films with different Se concentrations to quantify the mechanisms and the passivation role of Se. We demonstrate a universal dependence between the Se concentration and the radiative efficiency and a ten-fold enhancement of the luminescence between CdTe and CdSe0.4Te0.6. Raw luminescence maps are converted into maps of the Se concentration, revealing its graded profile within the stack. We demonstrate the diffusion of Se along CdTe grain boundaries induced by the cadmium chloride annealing treatment and determine the diffusion coefficients, which are more than eight times higher at grain boundaries than in grain interiors. These results provide microscopic insights into the distribution of Se and its impact on the passivation of CdSeTe/CdTe solar cells.
Original language | American English |
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Number of pages | 8 |
Journal | APL Materials |
Volume | 12 |
Issue number | 3 |
DOIs | |
State | Published - 2024 |
NREL Publication Number
- NREL/JA-5K00-89764
Keywords
- cathodoluminescence spectroscopy
- crystallographic defects
- electrical properties and parameters
- luminescence
- optoelectronic properties
- polycrystalline material
- scanning electron microscopy
- semiconductors
- solar cells
- thin films