Quantitative Investigation of Reactions in Copper-Indium-Gallium Multilayer Thin Films

doi:10.1109/PVSC.1996.564286

Quantitative Investigation of Reactions in Copper-Indium-Gallium Multilayer Thin Films

Research output: Contribution to conference › Paper

Abstract

Multilayer thin films of Cu-In, Cu-Ga, and Cu-In-Ga have been analyzed in order to understand thin film phase transformations that are relevant to the production of Cu(In,Ga)Se2 (CIGS) photovolataic solar cells. For example, the intermetallic phases present during selenization of precursor films will impact film microstructure and influence the resulting properties. In this research, phaseformation sequences were predicted by application of the Effective Heat of Formation model. The accuracy of these predictions was then explored experimentally. Through the use of differential scanning calorimetry (DSC), the reaction kinetics of product film formation were examined. X-ray diffraction (XRD) has been used to determine reactant and product phases. Auger electron spectroscopy (AES)has been used to explore segregation within the film.

Original language	American English
Pages	949-952
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564286
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22429

Access to Document

10.1109/PVSC.1996.564286

Cite this

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title = "Quantitative Investigation of Reactions in Copper-Indium-Gallium Multilayer Thin Films",

abstract = "Multilayer thin films of Cu-In, Cu-Ga, and Cu-In-Ga have been analyzed in order to understand thin film phase transformations that are relevant to the production of Cu(In,Ga)Se2 (CIGS) photovolataic solar cells. For example, the intermetallic phases present during selenization of precursor films will impact film microstructure and influence the resulting properties. In this research, phaseformation sequences were predicted by application of the Effective Heat of Formation model. The accuracy of these predictions was then explored experimentally. Through the use of differential scanning calorimetry (DSC), the reaction kinetics of product film formation were examined. X-ray diffraction (XRD) has been used to determine reactant and product phases. Auger electron spectroscopy (AES)has been used to explore segregation within the film.",

author = "NREL",

year = "1996",

doi = "10.1109/PVSC.1996.564286",

language = "American English",

pages = "949--952",

note = "Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

TY - CONF

T1 - Quantitative Investigation of Reactions in Copper-Indium-Gallium Multilayer Thin Films

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Multilayer thin films of Cu-In, Cu-Ga, and Cu-In-Ga have been analyzed in order to understand thin film phase transformations that are relevant to the production of Cu(In,Ga)Se2 (CIGS) photovolataic solar cells. For example, the intermetallic phases present during selenization of precursor films will impact film microstructure and influence the resulting properties. In this research, phaseformation sequences were predicted by application of the Effective Heat of Formation model. The accuracy of these predictions was then explored experimentally. Through the use of differential scanning calorimetry (DSC), the reaction kinetics of product film formation were examined. X-ray diffraction (XRD) has been used to determine reactant and product phases. Auger electron spectroscopy (AES)has been used to explore segregation within the film.

AB - Multilayer thin films of Cu-In, Cu-Ga, and Cu-In-Ga have been analyzed in order to understand thin film phase transformations that are relevant to the production of Cu(In,Ga)Se2 (CIGS) photovolataic solar cells. For example, the intermetallic phases present during selenization of precursor films will impact film microstructure and influence the resulting properties. In this research, phaseformation sequences were predicted by application of the Effective Heat of Formation model. The accuracy of these predictions was then explored experimentally. Through the use of differential scanning calorimetry (DSC), the reaction kinetics of product film formation were examined. X-ray diffraction (XRD) has been used to determine reactant and product phases. Auger electron spectroscopy (AES)has been used to explore segregation within the film.

U2 - 10.1109/PVSC.1996.564286

DO - 10.1109/PVSC.1996.564286

M3 - Paper

SP - 949

EP - 952

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Quantitative Investigation of Reactions in Copper-Indium-Gallium Multilayer Thin Films

Abstract

Conference

NREL Publication Number

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Cite this