Abstract
Precession electron diffraction (PED) was used to measure the long-range order parameter in lattice-mismatched AlInP epitaxial films under investigation for solid-state-lighting applications. Both double- and single-variant films grown at 620, 650 and 680 °C were analysed in TEM cross-section. PED patterns were acquired in selected-area-diffraction mode through external microscope control using serial acquisition, which allows inline image processing. The integrated peak intensities from experimental patterns were fit using dynamical simulations of diffraction from the ordered domain structures. Included in the structure-factor calculations were mean atomic displacements of the anions (P) due to ordering, which were found by valence-force-field calculations to have a nearly linear dependence on order parameter. A maximum order parameter of S = 0.36 was measured for a double-variant specimen grown at 650 °C.
Original language | American English |
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Pages (from-to) | 132-141 |
Number of pages | 10 |
Journal | Journal of Microscopy |
Volume | 284 |
Issue number | 2 |
DOIs | |
State | Published - Nov 2021 |
Bibliographical note
Publisher Copyright:© 2021 Royal Microscopical Society
NREL Publication Number
- NREL/JA-5K00-79511
Keywords
- atomic ordering
- light-emitting diodes
- precession electron diffraction
- semiconductors
- solid-state lighting
- transmission electron microscopy