Abstract
This paper presents a quantitative study of how the non-uniform irradiance from solar simulators and the often overlooked non-uniformities in modules (e.g. mismatched cell performance in a module, connection of cell strings, bypass diodes) affect the measurement accuracy in Si module power calibrations. By implementing spatial non-uniformity maps of solar simulators and experimental diode parameters of individual cells in a module to our circuit model, it enables a better understanding of the interaction of simulator irradiance non-uniformity with module imperfections in module power measurements. The comparison between simulation and experiment shows that with a nonuniform irradiance of 3%, the PMAX deviations could be as low as ∼0.5 % for good-quality Si modules, and 2% for poor-quality Si modules, confirming the sensitivity of module power calibrations to module properties.
Original language | American English |
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Pages | 3618-3622 |
Number of pages | 5 |
DOIs | |
State | Published - 26 Nov 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country/Territory | United States |
City | Waikoloa Village |
Period | 10/06/18 → 15/06/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
NREL Publication Number
- NREL/CP-5900-70852
Keywords
- analytical models
- calibration
- imaging
- integrated circuit modeling
- power measurement
- silicon
- statistical analysis