Quantum Mechanical Simulation of Nanosized Metal-Oxide-Semiconductor Field-Effect Transistor Using Empirical Pseudopotentials: A Comparison for Charge Density Occupation Methods: Article No. 084510

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Number of pages9
JournalJournal of Applied Physics
Volume106
Issue number8
DOIs
StatePublished - 2009

NREL Publication Number

  • NREL/JA-590-47232

Keywords

  • charge density
  • LCBB
  • nanosized
  • quantum mechanical simulation
  • tunneling currents

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