Quantum-Size-Induced Electronic Transitions in Quantum Dots: Indirect Band-Gap GaAs: Article No. 035306

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	8
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.78.035306
State	Published - 2008

NLR Publication Number

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title = "Quantum-Size-Induced Electronic Transitions in Quantum Dots: Indirect Band-Gap GaAs: Article No. 035306",

keywords = "electronic transition, quantum dots, semiconductor nanostructures",

author = "NREL",

year = "2008",

doi = "10.1103/PhysRevB.78.035306",

language = "American English",

volume = "78",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Quantum-Size-Induced Electronic Transitions in Quantum Dots: Indirect Band-Gap GaAs

T2 - Article No. 035306

AU - NREL, null

PY - 2008

Y1 - 2008

KW - electronic transition

KW - quantum dots

KW - semiconductor nanostructures

U2 - 10.1103/PhysRevB.78.035306

DO - 10.1103/PhysRevB.78.035306

M3 - Article

SN - 1098-0121

VL - 78

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

ER -