Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs

Daniel A. Beaton, A. J. Ptak, K. Alberi, A. Mascarenhas

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16 Scopus Citations

Abstract

We report on the lattice matched quaternary alloy, ByGa1 -yAs1 -x Bix grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B≃1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Original languageAmerican English
Pages (from-to)37-40
Number of pages4
JournalJournal of Crystal Growth
Volume351
Issue number1
DOIs
StatePublished - 15 Jul 2012

NREL Publication Number

  • NREL/JA-5900-54048

Keywords

  • bismuth compounds
  • molecular beam epitaxy
  • solid solutions
  • x-ray diffraction

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